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  page . 1 april 23,2012-rev.00 bc847cstb6 dual npn general purpose transistor voltage 45 volts 210 mwatts features ? npn epitaxial silicon, planar design ? collector-emitter voltage vce = 45v ? collector current ic = 100ma ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. . (halogenfree) mechanical data ? case: sot-563, plastic ? terminals: solderable per mil-std-750, method 2026 ? approx. weight: 0.003 grams ? marking: t7 power absolute ratings thermal characteristics note 1: mounted on 1cm 2 minimum pad pcb. parameter symbol value units collector - emitter voltage v ceo 45 v collector - base voltage v cbo 50 v emitter - base voltage v ebo 6.0 v collector current - continuous i c 100 ma parameter symbol value units max power dissipation (note 1) p tot 210 mw thermal resistance , junction to ambient (note 1) r ? ja 590 o c/w operating junction temperature and storage temperature range t j ,t stg -55 to 150 o c
page . 2 april 23,2012-rev.00 bc847cstb6 electrical characteristics par am e t e r s ymb ol t e s t c on d it i on m in . t y p. max . u n it s c o lle c t o r - e m i tt e r b r e a kd o wn v o lt a g e v (b r )c e o i c = 1 0 m a , i b =0 4 5 - - v c o lle c t o r - e m i tt e r b r e a kd o wn v o lt a g e v (b r)c e s i c = 1 0 ua , v e b = 0 5 0 - - v c o lle c t o r - b a s e b r e a k d o wn vo lt a g e v (b r )c b o i c = 1 0 ua , i e =0 5 0 - - v e m i t t e r - b a s e b r e a k d o wn vo lt a g e v (b r)e b o i e = 1 . 0 ua , i c = 0 6 . 0 - - v c o lle c t o r c uto ff c urre nt i c e o v c b = 3 0 v, i e =0 - - 1 5 na d c c ur re nt ga i n h f e i c = 2 . 0 m a , v c e = 5 . 0 v c o lle c t o r - e m i tt e r s a tura t i o n vo lt a g e v c e (s a t) i c = 1 0 m a , i b =0 .5 m a i c = 1 0 0 ma , i b = 5 . 0 m a - - 0 .2 5 0 . 6 v b a se - e mi t te r s a tur a t i o n vo lt a g e v b e (s at ) i c = 1 0 m a , i b =0 .5 m a i c = 1 0 0 ma , i b = 5 . 0 m a - - 0 . 7 0 . 9 - - v b a se - e mi t te r vo lta g e v b e (o n) i c = 2 . 0 ma , v c e =5 . 0 v i c = 1 0 m a , v c e = 5 . 0 v 5 8 0 - 6 5 0 - 7 0 0 7 7 0 m v out p ut c a p a ci t a nc e c c b v c b = 1 0 v, i e =0 , f= 1 . 0 mhz - - 1 . 5 p f 4 2 0 5 2 0 8 0 0 -
page . 3 april 23,2012-rev.00 bc847cstb6 rating and characteristic curves 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1 10 100 i c , collector current (ma) v be (sat), base?emitter saturation voltage (v) t j = 150c t j = 25c t j = 75c t j = 125c fig.1 base emitter saturation voltage vs. collector current i c /i b = 20 0 100 200 300 400 500 600 700 800 900 1000 0.001 0.01 0.1 1 i c , collector current (a) h fe , dc current gain t j = 150c t j = 25c t j = 75c v ce = 1v t j = 125c fig.4 dc current gain vs. collector current 0 0.05 0.1 0.15 0.2 0.25 0.3 1 10 100 i c , collector current (ma) v ce (sat), collector?emitter saturation voltage (v) t j = 150c t j = 25c t j = 75c t j = 125c i c /i b = 20 fig.3 collector emitter saturation voltage vs. collector current 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.01 0.1 1 10 100 i c , collector current (ma) v be (on), base?emitter voltage (v) t j = 150c t j = 25c t j = 75c v ce = 5v t j = 125c fig.2 base emitter voltage vs. collector current 0.1 1 10 0.1 1 10 100 v r , reverse voltage (v) c, capacitance (pf) c ib (be) c ob (cb) t a = 25c fig.5 typical capacitance
mounting pad layout ? packing information t/r - 4k per 7" plastic reel t/r - 10k per 13" plastic reel order information bc847cstb6 page . 4 apri l 23,2012-rev.00
part no_pack ing code_version bc847cstb6 _r1_00001 bc847cstb6 _r2_00001 for example : rb500v-40 _ r2 _ 00001 part no. serial number version code means hf packing size code means 13" packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing (t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d bc847cstb6 april 23,2012-rev.00 page . 5
disclaimer z reproducing and modifying information of the document is prohibited without permission from panjit international inc.. z panjit international inc. reserves the right s to make changes of the content herein the document anytime without notific ation. please refer to our website for the latest document. z panjit international inc. disclaims any and a ll liability arising out of the application or use of any product including damages inci dentally and consequentially occurred. z panjit international inc. does not assume any and all im plied warranties, including warranties of fitness for particular pur pose, non-infringement and merchantability. z applications shown on the herein doc ument are examples of standard use and operation. customers are responsible in co mprehending the suitable use in particular applications. panjit international inc. make s no representation or warranty that such applications will be suitable for the specified us e without further testing or modification. z the products shown herein are not desi gned and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera . customers using or selli ng these products for use in such applications do so at their own risk and agree to fully indemnify panjit international inc. for any damages result ing from such improper use or sale. bc847cstb6 page . 6 apri l 23,2012-rev.00


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